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IPA95R750P7XKSA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPA95R750P7XKSA1 - Infineon  - 3D model
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IPA95R750P7XKSA1 Details

  • Manufacturer Part Number:

    IPA95R750P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPA95R750P7XKSA1 Frequently Asked Questions (FAQs)

  • The IPA95R750P7XKSA1 can operate from -40°C to 150°C, with a maximum junction temperature of 150°C.
  • Proper cooling can be achieved through a combination of heat sinks, thermal interfaces, and airflow. The device's thermal resistance (Rth) is 1.5 K/W, and a heat sink with a thermal resistance of 1.5 K/W or lower is recommended.
  • A 2-layer or 4-layer PCB with a solid ground plane and a separate power plane is recommended. The device's pins should be connected to the power plane through vias, and the power plane should be connected to the heat sink.
  • The device has built-in overvoltage protection (OVP) and overcurrent protection (OCP). Additionally, external protection circuits such as TVS diodes and fuses can be used to protect the device from voltage spikes and overcurrent conditions.
  • The recommended gate drive voltage is 15V, with a maximum gate-source voltage of 20V.

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IPA95R750P7XKSA1 Overview

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