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IPAN70R360P7SXKSA1 - Infineon

Description: MOSFET CONSUMER

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IPAN70R360P7SXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAN70R360P7SXKSA1-+-
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3D Models
IPAN70R360P7SXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IPAN70R360P7SXKSA1-+-
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IPAN70R360P7SXKSA1 Details

  • Manufacturer Part Number:

    IPAN70R360P7SXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPAN70R360P7SXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPAN70R360P7SXKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • A recommended PCB layout for the IPAN70R360P7SXKSA1 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.
  • Use a voltage regulator or a TVS (Transient Voltage Suppressor) diode to protect the device from overvoltage, and a current limiter or a fuse to protect against overcurrent.
  • The recommended gate resistor value for the IPAN70R360P7SXKSA1 is in the range of 10Ω to 50Ω, depending on the specific application and switching frequency.

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IPAN70R360P7SXKSA1 Overview

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