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IPAW60R180P7SXKSA1 - Infineon

Description: 600VCoolMOSªP7PowerTransistor

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IPAW60R180P7SXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK
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3D Models
IPAW60R180P7SXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK
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IPAW60R180P7SXKSA1 Details

  • Manufacturer Part Number:

    IPAW60R180P7SXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    56 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    53 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPAW60R180P7SXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPAW60R180P7SXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPAW60R180P7SXKSA1. Ensure good thermal contact between the device and the heat sink, and use a suitable thermal interface material. The heat sink should be designed to provide adequate airflow and heat dissipation.
  • The recommended gate resistor value for the IPAW60R180P7SXKSA1 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IPAW60R180P7SXKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the parallel configuration.
  • The maximum switching frequency for the IPAW60R180P7SXKSA1 depends on the specific application and operating conditions. However, as a general guideline, the device can handle switching frequencies up to 20 kHz. It's recommended to consult the datasheet and application notes for more information.

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IPAW60R180P7SXKSA1 Overview

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