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IPAW60R190CEXKSA1 - Infineon

Description: N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1

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IPAW60R190CEXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK
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IPAW60R190CEXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK
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IPAW60R190CEXKSA1 Details

  • Manufacturer Part Number:

    IPAW60R190CEXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    418 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    26.7 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    59 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPAW60R190CEXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for IPAW60R190CEXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • Proper cooling is crucial for the IGBT's reliability. Ensure good thermal contact between the IGBT and the heat sink, and use a thermal interface material if necessary. Also, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for IPAW60R190CEXKSA1 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency.
  • Yes, IPAW60R190CEXKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the IGBTs are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for IPAW60R190CEXKSA1 is typically around 1-2 microseconds, depending on the specific application and switching frequency. However, the optimal dead time may vary, and it's recommended to consult the datasheet and application notes for more information.

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IPAW60R190CEXKSA1 Overview

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