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IPAW60R360P7SXKSA1 - Infineon

Description: INFINEON - IPAW60R360P7SXKSA1 - MOSFET, N-CH, 600V, 9A, 22W, TO-220FP

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IPAW60R360P7SXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK-1
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IPAW60R360P7SXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK-1
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IPAW60R360P7SXKSA1 Details

  • Manufacturer Part Number:

    IPAW60R360P7SXKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    27 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPAW60R360P7SXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPAW60R360P7SXKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPAW60R360P7SXKSA1. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material if necessary. Also, consider the airflow and thermal design of the system to prevent hotspots.
  • The recommended gate resistor value for the IPAW60R360P7SXKSA1 is typically in the range of 10-20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the IPAW60R360P7SXKSA1 is suitable for high-reliability applications. Infineon Technologies AG has a rigorous testing and qualification process to ensure the device meets the required standards. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
  • To protect the IPAW60R360P7SXKSA1 from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the system design. Additionally, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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IPAW60R360P7SXKSA1 Overview

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