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IPAW60R600P7SXKSA1 - Infineon

Description: MOSFET CONSUMER

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PCB Footprints
IPAW60R600P7SXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220FullPAK_1
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3D Models
IPAW60R600P7SXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220FullPAK_1
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IPAW60R600P7SXKSA1 Details

  • Manufacturer Part Number:

    IPAW60R600P7SXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220FP, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPAW60R600P7SXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IPAW60R600P7SXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IPAW60R600P7SXKSA1. Ensure good thermal contact between the device and the heat sink, and use a suitable thermal interface material. The heat sink should be designed to dissipate the maximum power loss of the IGBT, taking into account the operating conditions and ambient temperature.
  • The recommended gate resistor value for the IPAW60R600P7SXKSA1 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the IPAW60R600P7SXKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive and control circuits are designed to handle the parallel configuration. Consult the datasheet and application notes for more information on parallel operation.
  • The maximum allowable voltage transient for the IPAW60R600P7SXKSA1 is specified in the datasheet as 600 V. However, it's recommended to limit the voltage transient to 500 V or less to ensure reliable operation and prevent damage to the device.

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IPAW60R600P7SXKSA1 Overview

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