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IPB017N10N5ATMA1 - Infineon

Description: N-Channel 100 V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7

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PCB Footprints
IPB017N10N5ATMA1 - Infineon PCB footprint - Other - Other - D²-PAK 7pin
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IPB017N10N5ATMA1 - Infineon  - 3D model - Other - D²-PAK 7pin
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IPB017N10N5ATMA1 Details

  • Manufacturer Part Number:

    IPB017N10N5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TO-263, D2PAK-7/6

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    979 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB017N10N5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB017N10N5ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPB017N10N5ATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB017N10N5ATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that all equipment is properly grounded.

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Part Image IPB017N10N5 Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263