IPB100N04S4H2ATMA1 - Infineon

IPB100N04S4H2ATMA1 Details

• Manufacturer Part Number:

  IPB100N04S4H2ATMA1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Germany, Malaysia, Mexico

• ECCN Code:

  EAR99

• Factory Lead Time:

  9 Weeks

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  280 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  100 A

• Drain-source On Resistance-Max:

  0.0024 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  400 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON