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IPB240N04S4R9ATMA1 - Infineon

Description: OptiMOS™-T2 Power- MOSFET 1 Channel 240A 40V

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IPB240N04S4R9ATMA1 - Infineon  - 3D model
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IPB240N04S4R9ATMA1 Details

  • Manufacturer Part Number:

    IPB240N04S4R9ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    750 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.00087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    960 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB240N04S4R9ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPB240N04S4R9ATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and heat sink.
  • The recommended gate resistor value for IPB240N04S4R9ATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, IPB240N04S4R9ATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
  • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPB240N04S4R9ATMA1 Overview

Use the download button to access the IPB240N04S4R9ATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IPB24, or try a keyword search, such as Power Field-Effect Transistors

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