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IPB60R099CPA - Infineon

Description: MOSFET N-Channel 600V 31A CoolMOS TO263 Infineon IPB60R099CPA N-channel MOSFET Transistor, 31 A, 600 V, 3-Pin TO-263

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IPB60R099CPA Details

  • Manufacturer Part Number:

    IPB60R099CPA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB60R099CPA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB60R099CPA is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
  • The recommended gate resistor value for the IPB60R099CPA is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPB60R099CPA can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between the devices.
  • To protect the IPB60R099CPA, it's recommended to implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as TVS diodes and current sense resistors, respectively.

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IPB60R099CPA Overview

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Part Image IPB60R099CPAATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB60R099CPATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB60R099CP Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image SP000088490 Infineon Technologies AG

Power Field-Effect Transistor

Part Image IPB60R099CS Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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