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IPB60R125CFD7ATMA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPB60R125CFD7ATMA1 - Infineon PCB footprint - Other - Other - IPB60R125CFD7ATMA1-4
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IPB60R125CFD7ATMA1 Details

  • Manufacturer Part Number:

    IPB60R125CFD7ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    78 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    92 W

  • Pulsed Drain Current-Max (IDM):

    66 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB60R125CFD7ATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The selection of a suitable gate driver depends on the specific application requirements, such as voltage, current, and switching frequency. Infineon recommends using their EiceDRIVER™ gate driver family, which is specifically designed for their IGBT modules. The EiceDRIVER™ datasheet provides guidance on selecting the correct driver for the IPB60R125CFD7ATMA1.
  • The IPB60R125CFD7ATMA1 has an internal overcurrent protection (OCP) feature that limits the maximum current to 125 A. If the current exceeds this limit, the module will shut down to prevent damage. The OCP threshold can be adjusted using an external resistor network, as described in the datasheet.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended thermal management guidelines, such as using a heat sink with a thermal interface material, and ensuring good airflow around the module. Additionally, the IPB60R125CFD7ATMA1 has a built-in temperature sensor that can be used to monitor the module temperature and prevent overheating.
  • Infineon recommends storing the IPB60R125CFD7ATMA1 in a dry, cool place, away from direct sunlight and moisture. The module should be handled with care to prevent mechanical stress, and electrostatic discharge (ESD) precautions should be taken to prevent damage to the internal components.

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IPB60R125CFD7ATMA1 Overview

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