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IPB60R299CPA - Infineon

Description: MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA

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IPB60R299CPA - Infineon PCB footprint - Other - Other - IPB60R299CPA-1
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IPB60R299CPA Details

  • Manufacturer Part Number:

    IPB60R299CPA

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, 3 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.299 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPB60R299CPA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB60R299CPA is -40°C to 150°C, with a junction temperature (Tj) of up to 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, use a suitable heat sink, and implement thermal monitoring and protection mechanisms.
  • The recommended gate drive voltage for the IPB60R299CPA is between 10V and 15V, with a maximum gate-source voltage (Vgs) of ±20V.
  • Yes, the IPB60R299CPA can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and balancing of the gate signals to avoid uneven current distribution.
  • To protect the IPB60R299CPA from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor.

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IPB60R299CPA Overview

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Image Part Number Model
Part Image IPB60R299CPATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB60R299CP Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB