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IPB64N25S3-20 - Infineon

Description: 250V, N-Ch, 20 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T

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IPB64N25S3-20 - Infineon - PCB symbol
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PCB Footprints
IPB64N25S3-20 - Infineon PCB footprint - Other - Other - PG-TO263-3-2_2023-2
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IPB64N25S3-20 - Infineon - 3D model - Other - PG-TO263-3-2_2023-2
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IPB64N25S3-20 Details

  • Manufacturer Part Number:

    IPB64N25S3-20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TO-263, 3/2 PIN

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    256 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPB64N25S3-20 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPB64N25S3-20 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPB64N25S3-20 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPB64N25S3-20 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • To protect the IPB64N25S3-20 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage clamping devices, such as TVS diodes, and current sensing resistors, along with proper PCB layout and design practices.

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IPB64N25S3-20 Overview

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