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IPC100N04S5L-1R1 - Infineon

Description: Infineon MOSFET_(20V,40V)

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IPC100N04S5L-1R1 - Infineon PCB footprint - Other - Other - IPC100N04S5L-1R1-3
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3D Models
IPC100N04S5L-1R1 - Infineon  - 3D model - Other - IPC100N04S5L-1R1-3
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IPC100N04S5L-1R1 Details

  • Manufacturer Part Number:

    IPC100N04S5L-1R1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Austria, Germany, Indonesia, Malaysia

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-29

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    480 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

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IPC100N04S5L-1R1 Overview

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