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IPC50N04S5L5R5ATMA1 - Infineon

Description: Trans MOSFET N-CH 40V 50A Automotive 8-Pin TDSON EP T/R

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IPC50N04S5L5R5ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-33_2
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IPC50N04S5L5R5ATMA1 - Infineon  - 3D model - Other - PG-TDSON-8-33_2
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IPC50N04S5L5R5ATMA1 Details

  • Manufacturer Part Number:

    IPC50N04S5L5R5ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8-33, 8 PIN

  • Country Of Origin:

    Austria, Germany, Indonesia, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPC50N04S5L5R5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPC50N04S5L5R5ATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized. Also, consider using a gate driver IC to provide a high current drive capability.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source connections as close as possible to minimize the gate-source loop inductance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current and shut down the circuit if necessary.
  • For high-power applications, consider using a heat sink with a thermal interface material (TIM) to improve heat transfer. Ensure good airflow around the heat sink and consider using a fan for forced convection cooling.

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IPC50N04S5L5R5ATMA1 Overview

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