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IPC90N04S53R6ATMA1 - Infineon

Description: MOSFET MOSFET_(20V,40V)

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IPC90N04S53R6ATMA1 - Infineon PCB footprint - Other - Other - IPC90N04S53R6ATMA1-3
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IPC90N04S53R6ATMA1 - Infineon  - 3D model - Other - IPC90N04S53R6ATMA1-3
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IPC90N04S53R6ATMA1 Details

  • Manufacturer Part Number:

    IPC90N04S53R6ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Austria, Germany, Indonesia, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    360 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPC90N04S53R6ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPC90N04S53R6ATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPC90N04S53R6ATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • Yes, the IPC90N04S53R6ATMA1 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
  • The user should implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the MOSFET. This can be achieved using zener diodes, TVS diodes, and current sense resistors.

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IPC90N04S53R6ATMA1 Overview

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