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IPD06N03LA - Infineon

Description: MOSFET Transistor, N-Channel, TO-252AA

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IPD06N03LA - Infineon PCB footprint - Other - Other - P-TO252-3-11
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IPD06N03LA Details

  • Manufacturer Part Number:

    IPD06N03LA

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252AA

  • Package Description:

    PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    225 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    350 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD06N03LA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD06N03LA is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device and ensure good thermal contact. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 125 W. Additionally, ensure good airflow around the device and heat sink to prevent overheating.
  • The recommended gate drive voltage for the IPD06N03LA is between 10 V and 15 V. However, the device can tolerate gate drive voltages up to 20 V, but this may affect the device's performance and reliability.
  • Yes, the IPD06N03LA is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the IPD06N03LA from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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IPD06N03LA Overview

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Part Image IPD06N03LAG Rochester Electronics LLC

50A, 25V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

Part Image IPD06N03LAG Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA