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IPD100N06S403ATMA2 - Infineon

Description: 60 V, N-Ch, 3.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2

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IPD100N06S403ATMA2 Details

  • Manufacturer Part Number:

    IPD100N06S403ATMA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD100N06S403ATMA2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD100N06S403ATMA2 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPD100N06S403ATMA2 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, IPD100N06S403ATMA2 is suitable for high-frequency switching applications up to 1 MHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
  • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPD100N06S403ATMA2 Overview

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