Part Image

IPD12CN10NGATMA1 - Infineon

Description: INFINEON - IPD12CN10NGATMA1 - Power MOSFET, N Channel, 100 V, 67 A, 0.0093 ohm, TO-252 (DPAK), Surface Mount

Download IPD12CN10NGATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPD12CN10NGATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3 _ 2022
click to zoom

IPD12CN10NGATMA1 Details

  • Manufacturer Part Number:

    IPD12CN10NGATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    154 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    67 A

  • Drain-source On Resistance-Max:

    0.0124 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    268 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD12CN10NGATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IPD12CN10NGATMA1 is a 3.3mm x 3.3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions and derating guidelines in the datasheet. Additionally, consider using a thermal interface material and a heat sink to reduce the junction temperature.
  • The maximum allowed voltage for IPD12CN10NGATMA1 is 12V. Exceeding this voltage may damage the device or affect its reliability.
  • To protect IPD12CN10NGATMA1 from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and consider using ESD-protection devices or circuits in the application.
  • The typical turn-on and turn-off time for IPD12CN10NGATMA1 is around 10-20ns. However, this may vary depending on the specific application and operating conditions.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPD12CN10NGATMA1 Overview

Use the download button to access the IPD12CN10NGATMA1 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD12CN10NGATMA1

Showing 0 results