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IPD135N03LGATMA1 - Infineon

Description: Infineon IPD135N03LGATMA1 N-channel MOSFET Transistor, 30 A, 30 V, 3-Pin TO-252

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IPD135N03LGATMA1 Details

  • Manufacturer Part Number:

    IPD135N03LGATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    210 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD135N03LGATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD135N03LGATMA1 is -40°C to 150°C.
  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, and connecting it to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure the device is properly biased, make sure to follow the recommended biasing scheme outlined in the datasheet, and use a suitable gate driver to provide a stable voltage supply.
  • The critical parameters to monitor during operation to prevent overheating are the junction temperature (Tj), case temperature (Tc), and the thermal resistance (Rth).
  • Yes, the IPD135N03LGATMA1 is suitable for high-reliability applications, but it's essential to follow the recommended design and assembly guidelines to ensure the device operates within its specified parameters.

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IPD135N03LGATMA1 Overview

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Part Image IPD135N03LGBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252