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IPD135N08N3G - Infineon

Description: Infineon IPD135N08N3G N-Channel 80 V 45A (Tc) 79W (Tc) Surface Mount PG-TO252-3, 1730 pF @ 40 V, 3.5V @ 33µA, -55°C ~ 175°C

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PCB Footprints
IPD135N08N3G - Infineon PCB footprint - Other - Other - PG-TO-252-3_2026
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IPD135N08N3G Details

  • Manufacturer Part Number:

    IPD135N08N3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252AA

  • Package Description:

    GREEN, PLASTIC, TO-252, 3 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.0135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    79 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD135N08N3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD135N08N3G is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The recommended thermal resistance (Rth) for the heat sink is ≤ 1.5 K/W. Additionally, ensure good airflow around the device and heat sink to prevent overheating.
  • The recommended gate drive voltage for the IPD135N08N3G is between 10 V and 15 V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device and ensure optimal performance.
  • Yes, the IPD135N08N3G can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current distribution and potential damage to the devices.
  • To ensure optimal performance and reliability, it's recommended to follow Infineon's guidelines for PCB layout and design. This includes using a multi-layer PCB, keeping the power traces short and wide, and ensuring good thermal conductivity. Additionally, it's essential to minimize parasitic inductance and capacitance in the PCB design.

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IPD135N08N3G Overview

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