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IPD200N15N3GATMA1 - Infineon

Description: MOSFET N-Ch 150V 50A OptiMOS3 DPAK

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IPD200N15N3GATMA1 - Infineon PCB footprint - Other - Other - PG-TO252 -3_ffw_1
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IPD200N15N3GATMA1 - Infineon  - 3D model - Other - PG-TO252 -3_ffw_1
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IPD200N15N3GATMA1 Details

  • Manufacturer Part Number:

    IPD200N15N3GATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC-3/2

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD200N15N3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for IPD200N15N3GATMA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the device's reliability. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material if necessary. The heat sink should be designed to dissipate heat efficiently, and the system should be designed to minimize thermal resistance.
  • The recommended gate resistor value for IPD200N15N3GATMA1 is between 10 ohms and 100 ohms. However, the optimal value depends on the specific application, switching frequency, and gate drive circuitry. It's recommended to consult the application note or contact Infineon support for more information.
  • Yes, IPD200N15N3GATMA1 is suitable for high-reliability applications. It's manufactured using a robust process, and Infineon provides a range of reliability data and qualification reports to support its use in demanding applications.
  • To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the system design. Additionally, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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IPD200N15N3GATMA1 Overview

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Image Part Number Model
Part Image IPD200N15N3G Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IPD200N15N3GBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252