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IPD25DP06NMATMA1 - Infineon

Description: P-Channel 60 V 6.5A (Tc) 28W (Tc) Surface Mount PG-TO252-3-313

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IPD25DP06NMATMA1 - Infineon PCB footprint - Other - Other - IPD25DP06NMATMA1-1
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IPD25DP06NMATMA1 Details

  • Manufacturer Part Number:

    IPD25DP06NMATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6.5 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    26 A

  • Reference Standard:

    IEC-68-1; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD25DP06NMATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and consider derating the device's current rating according to the temperature derating curve provided in the datasheet.
  • Although not explicitly stated in the datasheet, Infineon recommends limiting voltage transients on the drain-source pins to 10% of the maximum rated voltage (VDS) to prevent damage to the device.
  • Yes, the IPD25DP06NMATMA1 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize electromagnetic interference (EMI) and ensure reliable operation.
  • Infineon recommends a gate drive voltage of 10-15 V and a current of 1-2 A to ensure optimal switching performance and minimize switching losses. The exact gate drive requirements may vary depending on the specific application and operating conditions.

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