IPD35N10S3L26ATMA1 - Infineon

IPD35N10S3L26ATMA1 Details

• Manufacturer Part Number:

  IPD35N10S3L26ATMA1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Not Recommended

• Country Of Origin:

  Austria, Malaysia

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  3

• Avalanche Energy Rating (Eas):

  175 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  35 A

• Drain-source On Resistance-Max:

  0.0319 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  75 pF

• JEDEC-95 Code:

  TO-252

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  71 W

• Pulsed Drain Current-Max (IDM):

  140 A

• Reference Standard:

  AEC-Q101; IEC-68-1

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON