Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IPD380P06NMATMA1 - Infineon

Description: P-Channel 60 V 35A (Tc) 125W (Tc) Surface Mount PG-TO252-3, 38mOhm, -55°C ~ 175°C

Download IPD380P06NMATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IPD380P06NMATMA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IPD380P06NMATMA1 - Infineon PCB footprint - Other - Other - PG-TO252-3-313 | DPAK_2025-2
click to zoom
3D Models
IPD380P06NMATMA1 - Infineon - 3D model - Other - PG-TO252-3-313 | DPAK_2025-2
click to zoom

IPD380P06NMATMA1 Details

  • Manufacturer Part Number:

    IPD380P06NMATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    559 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD380P06NMATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD380P06NMATMA1 is -40°C to 150°C.
  • The recommended PCB layout for the IPD380P06NMATMA1 involves using a multi-layer PCB with a solid ground plane, placing decoupling capacitors close to the device, and using shielded cables for connections.
  • To ensure proper cooling, the IPD380P06NMATMA1 should be mounted on a heat sink with a thermal interface material, and the system should be designed to provide adequate airflow.
  • The recommended soldering conditions for the IPD380P06NMATMA1 are a peak temperature of 260°C, a dwell time of 30 seconds, and a soldering process that is Pb-free and RoHS-compliant.
  • To troubleshoot issues with the IPD380P06NMATMA1, check the device's thermal monitoring and protection features, verify the PCB layout and component placement, and use oscilloscopes and logic analyzers to debug the system.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPD380P06NMATMA1 Overview

Use the download button to access the IPD380P06NMATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD38, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD380P06NMATMA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IPD380P06NMATMA1 Alternates

Showing results

Image Part Number Model
Part Image IPD650P06NMATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image IPD650P06NM Infineon Technologies AG

Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image IPD06P002N Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 60V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image IPD06P002NATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 60V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252