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IPD50N04S4-08 - Infineon

Description: MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2

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IPD50N04S4-08 - Infineon PCB footprint - Other - Other - IPD50N04S4-08-2
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IPD50N04S4-08 Details

  • Manufacturer Part Number:

    IPD50N04S4-08

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    4

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD50N04S4-08 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50N04S4-08 is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD50N04S4-08 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPD50N04S4-08 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
  • To protect the IPD50N04S4-08 from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe packaging and handling the device with ESD-protective equipment.

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IPD50N04S4-08 Overview

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Part Image IPD50N04S4-08 Rochester Electronics LLC

50A, 40V, 0.0079ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3