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IPD50N04S4L08ATMA1 - Infineon

Description: MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2

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IPD50N04S4L08ATMA1 - Infineon - PCB symbol
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IPD50N04S4L08ATMA1 - Infineon PCB footprint - Other - Other - IPD50N04S4L08ATMA1-1
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IPD50N04S4L08ATMA1 Details

  • Manufacturer Part Number:

    IPD50N04S4L08ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD50N04S4L08ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD50N04S4L08ATMA1 is -55°C to 150°C.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias or narrow traces near the MOSFET.
  • Yes, the IPD50N04S4L08ATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and consider the MOSFET's switching characteristics.
  • Use a suitable overvoltage protection circuit (e.g., TVS diode) and overcurrent protection (e.g., current sense resistor and comparator) to prevent damage to the MOSFET.

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IPD50N04S4L08ATMA1 Overview

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