Part Image

IPD50N10S3L-16 - Infineon

Description: MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T

Download IPD50N10S3L-16 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPD50N10S3L-16 - Infineon PCB footprint - Other - Other - PG-TO252-3-11_2023-1
click to zoom

IPD50N10S3L-16 Details

  • Manufacturer Part Number:

    IPD50N10S3L-16

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    TO-252-3-11, 3/2 PIN

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    330 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0199 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD50N10S3L-16 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50N10S3L-16 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD50N10S3L-16 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPD50N10S3L-16 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The recommended dead time for the IPD50N10S3L-16 in a half-bridge configuration is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPD50N10S3L-16 Overview

Use the download button to access the IPD50N10S3L-16 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD50, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD50N10S3L-16

Showing 0 results