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IPD50P04P4-13 - Infineon

Description: MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2 TO-252-3

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IPD50P04P4-13 - Infineon PCB footprint - Other - Other - IPD50P04P4-13-3
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IPD50P04P4-13 Details

  • Manufacturer Part Number:

    IPD50P04P4-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0126 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD50P04P4-13 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50P04P4-13 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to keep the junction temperature within the specified range.
  • A recommended PCB layout for minimizing EMI includes using a solid ground plane, keeping signal traces short and away from the device, and using shielding or filtering components as necessary.
  • The IPD50P04P4-13 is rated for a maximum voltage of 40V. Using it in a high-voltage application above this rating may damage the device or affect its reliability.
  • To troubleshoot issues, start by verifying the device's operating conditions, checking for proper power supply and signal connections, and reviewing the PCB layout for potential design flaws or manufacturing defects.

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IPD50P04P4-13 Overview

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Part Image IPD50P04P413ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 40V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252