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IPD50P04P4L-11 - Infineon

Description: MOSFET P-Ch 50A 40V OptiMOS-P2 TO252 Infineon IPD50P04P4L-11 P-channel MOSFET Transistor, 50 A, 40 V, 3-Pin TO-252

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IPD50P04P4L-11 - Infineon PCB footprint - Other - Other - IPD50P04P4L-11-1
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IPD50P04P4L-11 - Infineon  - 3D model - Other - IPD50P04P4L-11-1
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IPD50P04P4L-11 Details

  • Manufacturer Part Number:

    IPD50P04P4L-11

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Pin Count:

    4

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0106 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    58 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD50P04P4L-11 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50P04P04L-11 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to consider the thermal resistance and power dissipation of the device.
  • The recommended PCB layout and thermal design for the IPD50P04P04L-11 can be found in the Infineon application note AN2013-01, which provides guidelines for optimal thermal performance.
  • To handle the high current handling capability of the IPD50P04P04L-11, it is recommended to use a robust PCB design with adequate copper thickness and to follow the current handling guidelines provided by Infineon.
  • The IPD50P04P04L-11 has built-in ESD protection and latch-up prevention measures, but it is still recommended to follow standard ESD handling and prevention practices during assembly and handling.

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IPD50P04P4L-11 Overview

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Part Image IPD50P04P4L11ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SUD50P04-09L-E3 Vishay Siliconix

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Part Image IPD50P04P4L11ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252