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IPD50R280CEATMA1 - Infineon

Description: INFINEON - IPD50R280CEATMA1 - MOSFET, N CH, 550V, 13A, TO-252-3

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IPD50R280CEATMA1 - Infineon PCB footprint - Other - Other - Infineon-PG-TO252-3_ffw
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IPD50R280CEATMA1 Details

  • Manufacturer Part Number:

    IPD50R280CEATMA1

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    GREEN, PLASTIC, DPAK-3/2

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    231 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    42.9 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD50R280CEATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD50R280CEATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good airflow around the device.
  • A 2-layer or 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the power traces short and wide, and use vias to connect the power plane to the ground plane.
  • Use a voltage regulator or a voltage supervisor to ensure the input voltage remains within the recommended range of 10V to 30V. Add overvoltage protection (OVP) and undervoltage protection (UVP) circuits if necessary.
  • The recommended gate drive voltage for IPD50R280CEATMA1 is 10V to 15V, with a maximum gate current of 2A.

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Part Image IPD50R280CE Infineon Technologies AG

Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IPD50R280CEBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252