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IPD50R2K0CEAUMA1 - Infineon

Description: MOSFET N-CH 500V 2.4A TO252-3

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IPD50R2K0CEAUMA1 - Infineon PCB footprint - Other - Other - IPD50R2K0CEAUMA1-2
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IPD50R2K0CEAUMA1 Details

  • Manufacturer Part Number:

    IPD50R2K0CEAUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    34 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6.1 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD50R2K0CEAUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50R2K0CEAUMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
  • A recommended PCB layout for the IPD50R2K0CEAUMA1 includes a solid ground plane, wide power traces, and a decoupling capacitor close to the device.
  • Overvoltage protection can be achieved using a TVS diode or a zener diode, while overcurrent protection can be achieved using a fuse or a current-limiting resistor.
  • The recommended gate drive voltage for the IPD50R2K0CEAUMA1 is between 10V and 15V, with a maximum gate current of 2A.

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Part Image IPD50R2K0CE Infineon Technologies AG

Power Field-Effect Transistor, 3.6A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252