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IPD50R3K0CEAUMA1 - Infineon

Description: Infineon IPD50R3K0CEAUMA1 N-channel MOSFET, 1.7 A, 550 V CoolMOS CE, 3-Pin TO-252

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IPD50R3K0CEAUMA1 - Infineon PCB footprint - Other - Other - PG-TO252_2025-7
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IPD50R3K0CEAUMA1 Details

  • Manufacturer Part Number:

    IPD50R3K0CEAUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    4.1 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD50R3K0CEAUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD50R3K0CEAUMA1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms to prevent overheating.
  • The recommended PCB layout and thermal design for the IPD50R3K0CEAUMA1 can be found in the Infineon application note AN2013-01, which provides detailed guidelines for optimal thermal performance.
  • To handle the high current handling capability of the IPD50R3K0CEAUMA1, ensure that your PCB design includes adequate copper thickness, track width, and thermal vias to dissipate heat efficiently.
  • When using the IPD50R3K0CEAUMA1, key considerations for EMI and EMC include proper PCB layout, shielding, and filtering to minimize electromagnetic interference and ensure electromagnetic compatibility.

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IPD50R3K0CEAUMA1 Overview

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Part Image IPD50R3K0CEBTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 1.7A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252