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IPD530N15N3GATMA1 - Infineon

Description: INFINEON - IPD530N15N3GATMA1 - MOSFET, N CH, 150V, 21A, TO-252-3

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IPD530N15N3GATMA1 - Infineon PCB footprint - Other - Other - PG-TO252 -3_ffw_1
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IPD530N15N3GATMA1 - Infineon  - 3D model - Other - PG-TO252 -3_ffw_1
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IPD530N15N3GATMA1 Details

  • Manufacturer Part Number:

    IPD530N15N3GATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC PACKAGE-3/2

  • Country Of Origin:

    Germany, Malaysia, South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD530N15N3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for IPD530N15N3GATMA1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • Proper cooling is crucial for the device's reliability. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1-2°C/W is recommended.
  • The recommended gate resistor value for IPD530N15N3GATMA1 is between 10Ω and 22Ω. However, the optimal value depends on the specific application and switching frequency. Consult the application note or contact Infineon support for more information.
  • Yes, IPD530N15N3GATMA1 is suitable for high-reliability applications. It's built with Infineon's proprietary trench stop technology, which ensures high reliability and ruggedness. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specifications.
  • To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. Ensure the device is operated within its specified voltage and current ratings. Additionally, consider using a TVS (transient voltage suppressor) diode to protect against voltage spikes.

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IPD530N15N3GATMA1 Overview

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