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IPD60N10S4L-12 - Infineon

Description: 100V, N-Ch, 12 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2

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IPD60N10S4L-12 - Infineon - PCB symbol
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PCB Footprints
IPD60N10S4L-12 - Infineon PCB footprint - Other - Other - PG-TO252-3-313_2025-11
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3D Models
IPD60N10S4L-12 - Infineon - 3D model - Other - PG-TO252-3-313_2025-11
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IPD60N10S4L-12 Details

  • Manufacturer Part Number:

    IPD60N10S4L-12

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD60N10S4L-12 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD60N10S4L-12 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IPD60N10S4L-12 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPD60N10S4L-12 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The recommended dead time for the IPD60N10S4L-12 when used in a half-bridge configuration is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency.

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IPD60N10S4L-12 Overview

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