- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IPD60N10S4L12ATMA1
- Part Number IPD60N10S4L12ATMA1
- Manufacturer Infineon
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - PG-TO252 -3_ffw_1
- Released Date Jun 22, 2019
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IPD60N10S4L12ATMA1 Details
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Manufacturer Part Number:
IPD60N10S4L12ATMA1
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Country Of Origin:
Germany, Malaysia
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ECCN Code:
EAR99
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Factory Lead Time:
9 Weeks
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Manufacturer:
Infineon Technologies AG
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YTEOL:
6
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Avalanche Energy Rating (Eas):
120 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
IPD60N10S4L12ATMA1 Frequently Asked Questions (FAQs)
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The maximum operating temperature of the IPD60N10S4L12ATMA1 is 175°C, as specified in the datasheet.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
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The maximum current rating of the IPD60N10S4L12ATMA1 is 60A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
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To protect the IPD60N10S4L12ATMA1 from overvoltage and overcurrent, a suitable voltage regulator and current limiter should be used in the circuit design. Additionally, a fuse or circuit breaker can be used to protect against overcurrent conditions.
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The recommended gate drive voltage for the IPD60N10S4L12ATMA1 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.
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IPD60N10S4L12ATMA1 Overview
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