IPD60R180C7ATMA1 footprint, schematic symbol and 3D model by Infineon

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IPD60R180C7ATMA1 - Infineon PCB footprint - Other - Other - IPD60R180C7ATMA1

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Part Number IPD60R180C7ATMA1
Manufacturer Infineon
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - IPD60R180C7ATMA1
Released Date Sep 25, 2021
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

IPD60R180C7ATMA1 Details

Manufacturer Part Number:
IPD60R180C7ATMA1
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Active
Country Of Origin:
Germany, Mainland China
ECCN Code:
EAR99
Factory Lead Time:
17 Weeks
Manufacturer:
Infineon Technologies AG
YTEOL:
6
Avalanche Energy Rating (Eas):
53 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
13 A
Drain-source On Resistance-Max:
0.18 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
45 A
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

IPD60R180C7ATMA1 Frequently Asked Questions (FAQs)

The maximum operating temperature range for the IPD60R180C7ATMA1 is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
The recommended gate resistor value for the IPD60R180C7ATMA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.
Yes, the IPD60R180C7ATMA1 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to follow the recommended layout and decoupling guidelines to minimize parasitic inductance and capacitance.
To protect the IPD60R180C7ATMA1 from overvoltage and overcurrent conditions, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) diode, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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