Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IPD60R1K4C6ATMA1 - Infineon

Description: MOSFET LOW POWER_LEGACY

Download IPD60R1K4C6ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IPD60R1K4C6ATMA1 - Infineon - PCB symbol
click to zoom
PCB Footprints
IPD60R1K4C6ATMA1 - Infineon PCB footprint - Other - Other - IPD60R1K4C6ATMA1-2
click to zoom
3D Models
IPD60R1K4C6ATMA1 - Infineon - 3D model - Other - IPD60R1K4C6ATMA1-2
click to zoom

IPD60R1K4C6ATMA1 Details

  • Manufacturer Part Number:

    IPD60R1K4C6ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD60R1K4C6ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD60R1K4C6ATMA1 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.
  • The recommended PCB layout and thermal design for the IPD60R1K4C6ATMA1 can be found in the Infineon application note AN2019-01, which provides guidelines for optimal thermal performance and PCB design.
  • The thermal pad of the IPD60R1K4C6ATMA1 should be connected to a thermal ground plane or a heat sink to ensure efficient heat dissipation. During assembly and rework, it is essential to avoid damaging the thermal pad and to follow the recommended soldering and desoldering procedures.
  • The IPD60R1K4C6ATMA1 has an integrated ESD protection circuit, but it is still recommended to follow standard ESD protection procedures during handling and assembly to prevent damage to the device.

Trust Checks

This model has been verified by system checks.
System Verified
Sponsored

IPD60R1K4C6ATMA1 Overview

Use the download button to access the IPD60R1K4C6ATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPD60, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPD60R1K4C6ATMA1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑