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IPD60R1K5CE - Infineon

Description: 600V 1.2610V1.1A 49W TO-252-3 MOSFETs ROHS

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IPD60R1K5CE Details

  • Manufacturer Part Number:

    IPD60R1K5CE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    49 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD60R1K5CE Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also have a suitable propagation delay and rise/fall time to ensure proper switching.
  • The maximum allowed junction temperature for the IPD60R1K5CE is 150°C, as specified in the datasheet. Exceeding this temperature can lead to reduced lifespan or even device failure.
  • Infineon recommends using a suitable overvoltage protection circuit, such as a voltage clamp or a zener diode, to prevent voltage spikes from damaging the IGBT. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended switching frequency for the IPD60R1K5CE depends on the specific application and cooling conditions. However, as a general guideline, Infineon recommends keeping the switching frequency below 20 kHz to minimize losses and ensure reliable operation.

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IPD60R1K5CE Overview

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Part Image IPD60R1K5CEAUMA1 Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252