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IPD60R1K5CEAUMA1 - Infineon

Description: MOSFET CONSUMER

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IPD60R1K5CEAUMA1 - Infineon - PCB symbol
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IPD60R1K5CEAUMA1 - Infineon PCB footprint - Other - Other - IPD60R1K5CEAUMA1-2
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IPD60R1K5CEAUMA1 Details

  • Manufacturer Part Number:

    IPD60R1K5CEAUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    49 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD60R1K5CEAUMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPD60R1K5CEAUMA1 is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider derating the device's power handling capabilities at high temperatures.
  • The recommended PCB layout and thermal design for the IPD60R1K5CEAUMA1 can be found in the Infineon application note AN2013-01, which provides guidelines for optimal thermal performance and PCB design.
  • The thermal pad of the IPD60R1K5CEAUMA1 should be connected to a thermal ground plane or a heat sink to ensure efficient heat dissipation. During assembly and rework, it is essential to avoid damaging the thermal pad and to use a suitable thermal interface material.
  • The IPD60R1K5CEAUMA1 has an integrated ESD protection circuit, but it is still recommended to follow standard ESD handling precautions during assembly and handling to prevent damage to the device.

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IPD60R1K5CEAUMA1 Overview

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Part Image IPD60R1K5CE Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252