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IPD60R380C6ATMA1 - Infineon

Description: N-Channel 600 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3

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IPD60R380C6ATMA1 - Infineon PCB footprint - Other - Other - IPD60R380C6ATMA1-1
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IPD60R380C6ATMA1 Details

  • Manufacturer Part Number:

    IPD60R380C6ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    HIGH VOLTAGE

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10.6 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD60R380C6ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPD60R380C6ATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W and ensuring good airflow around the device.
  • A recommended PCB layout for IPD60R380C6ATMA1 includes a solid ground plane, wide power traces, and a decoupling capacitor (e.g., 100nF) close to the device.
  • Use a voltage regulator or a TVS (Transient Voltage Suppressor) diode to protect the device from overvoltage, and a current limiter or a fuse to protect against overcurrent.
  • The recommended gate resistor value for IPD60R380C6ATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.

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IPD60R380C6ATMA1 Overview

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Part Image IPD60R380C6BTMA1 Infineon Technologies AG

Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252