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IPD78CN10NGATMA1 - Infineon

Description: MOSFET

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IPD78CN10NGATMA1 - Infineon - PCB symbol
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PCB Footprints
IPD78CN10NGATMA1 - Infineon PCB footprint - Other - Other - PG-TO-252-3_2019_2
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3D Models
IPD78CN10NGATMA1 - Infineon - 3D model - Other - PG-TO-252-3_2019_2
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IPD78CN10NGATMA1 Details

  • Manufacturer Part Number:

    IPD78CN10NGATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, DPAK-3

  • Country Of Origin:

    Germany, Malaysia, South Korea

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPD78CN10NGATMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to keep the device temperature below 125°C.
  • A gate drive circuit with a high current capability (e.g., 1A) and a low output impedance is recommended. A gate resistor (Rg) of 10-20 ohms and a gate capacitor (Cg) of 1-10 nF are typical values.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. A fuse or a current-sensing resistor can be used for OCP.
  • A dead time of 100-200 ns is recommended to prevent shoot-through currents and ensure reliable operation. The dead time can be adjusted based on the specific application requirements.

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IPD78CN10NGATMA1 Overview

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