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IPD85P04P407ATMA2 - Infineon

Description: P-Channel 40 V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313 , 4V @ 150µA , 7.3mOhm , -55°C ~ 175°C (TJ)

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IPD85P04P407ATMA2 - Infineon - PCB symbol
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PCB Footprints
IPD85P04P407ATMA2 - Infineon PCB footprint - Other - Other - PG-TO252-3-313_2025
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IPD85P04P407ATMA2 - Infineon - 3D model - Other - PG-TO252-3-313_2025
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IPD85P04P407ATMA2 Details

  • Manufacturer Part Number:

    IPD85P04P407ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    85 A

  • Drain-source On Resistance-Max:

    0.0073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    91 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    340 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD85P04P407ATMA2 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C. Implement proper thermal management, such as heat sinks or fans, to keep the device temperature within the specified range.
  • Infineon recommends a gate drive voltage of 12V to 15V for optimal switching performance. However, the device can operate with a gate drive voltage as low as 6V, but with reduced switching performance.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. Infineon recommends using a voltage clamp or a zener diode for OVP, and a current sense resistor with a comparator for OCP.
  • The recommended dead time for the IPD85P04P407ATMA2 is 100ns to 200ns, depending on the specific application and switching frequency. A longer dead time can reduce EMI, but may increase switching losses.

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IPD85P04P407ATMA2 Overview

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