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IPD85P04P4L06ATMA2 - Infineon

Description: P-Channel 40 V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313

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IPD85P04P4L06ATMA2 - Infineon PCB footprint - Other - Other - PG-TO252-3-313_ 2024
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IPD85P04P4L06ATMA2 Details

  • Manufacturer Part Number:

    IPD85P04P4L06ATMA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    94 A

  • Drain-source On Resistance-Max:

    0.0064 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    88 W

  • Pulsed Drain Current-Max (IDM):

    340 A

  • Reference Standard:

    AEC-Q101; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPD85P04P4L06ATMA2 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider using a thermal interface material to improve heat transfer between the device and the heat sink.
  • Critical parameters to monitor for reliability and fault detection include junction temperature, voltage, current, and power dissipation. Monitoring these parameters can help detect potential faults and prevent damage to the device.
  • When selecting a gate driver for the IPD85P04P4L06ATMA2, consider the driver's output current capability, voltage rating, and switching frequency. Ensure the driver can provide a sufficient current to charge and discharge the device's input capacitance quickly enough to achieve the desired switching frequency.
  • When handling the IPD85P04P4L06ATMA2, follow standard electrostatic discharge (ESD) precautions, such as wearing an ESD strap, using an ESD mat, and storing the device in an anti-static bag. Avoid touching the device's pins or exposing it to moisture, extreme temperatures, or mechanical stress.

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IPD85P04P4L06ATMA2 Overview

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