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IPF050N10NF2SATMA1 - Infineon

Description: N-Channel 100 V 19A (Ta), 117A (Tc) 3.8W (Ta), 150W (Tc) Surface Mount PG-TO263-7

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IPF050N10NF2SATMA1 - Infineon PCB footprint - Other - Other - IPF050N10NF2SATMA1-2
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IPF050N10NF2SATMA1 Details

  • Manufacturer Part Number:

    IPF050N10NF2SATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    117 A

  • Drain-source On Resistance-Max:

    0.00505 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    468 A

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPF050N10NF2SATMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and derating the device's current and voltage ratings according to the operating temperature.
  • Infineon recommends using a gate drive circuit with a high current capability and a low output impedance to ensure fast switching times and low power losses. A suitable gate drive circuit can be found in Infineon's application note AN2013-03 or in their gate drive IC datasheets, such as the 1EDC or 2EDC families.
  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and an overcurrent protection circuit, such as a fuse or a current sense resistor. Additionally, the device's built-in protection features, such as overtemperature protection and undervoltage lockout, should be enabled and configured according to the application requirements.
  • Infineon recommends following the soldering and assembly guidelines outlined in their application note AN2013-03, which includes information on soldering temperatures, times, and techniques, as well as assembly guidelines for the device's TO-247 package.

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