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IPG20N04S4-09 - Infineon

Description: MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2

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IPG20N04S4-09 - Infineon - PCB symbol
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IPG20N04S4-09 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4
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IPG20N04S4-09 Details

  • Manufacturer Part Number:

    IPG20N04S4-09

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    145 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

IPG20N04S4-09 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate resistor value is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the IPG20N04S4-09 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure its quality and reliability.
  • Handle the device by the body, not the leads. Use an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the device's pins or leads with bare hands.

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IPG20N04S4-09 Overview

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IPG20N04S4-09 Alternates

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Part Image IPG20N04S4-09 Rochester Electronics LLC

20A, 40V, 0.0086ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TDSON-8
Part Image IPG20N04S409ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET