Part Image

IPG20N04S408ATMA1 - Infineon

Description: INFINEON - IPG20N04S408ATMA1 - MOSFET, AEC-Q101, DUAL N-CH, TDSON-8

Download IPG20N04S408ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPG20N04S408ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4
click to zoom

IPG20N04S408ATMA1 Details

  • Manufacturer Part Number:

    IPG20N04S408ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0076 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N04S408ATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the IPG20N04S408ATMA1 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IPG20N04S408ATMA1 is between 10 Ω to 22 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon's technical support for more information.
  • Yes, the IPG20N04S408ATMA1 is suitable for high-reliability applications. It's manufactured using Infineon's proprietary OptiMOS technology, which ensures high reliability and ruggedness. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the IPG20N04S408ATMA1 from ESD, handle the device by the body or use an ESD wrist strap or mat. Ensure the device is stored in an ESD-safe environment, and use ESD-protected packaging during transportation and storage.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPG20N04S408ATMA1 Overview

Use the download button to access the IPG20N04S408ATMA1 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IPG20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPG20N04S408ATMA1

Showing 0 results