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IPG20N04S4L08ATMA1 - Infineon

Description: MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2

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IPG20N04S4L08ATMA1 - Infineon - PCB symbol
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PCB Footprints
IPG20N04S4L08ATMA1 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4_1
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3D Models
IPG20N04S4L08ATMA1 - Infineon - 3D model - Other - PG-TDSON-8-4_1
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IPG20N04S4L08ATMA1 Details

  • Manufacturer Part Number:

    IPG20N04S4L08ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    145 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0082 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N04S4L08ATMA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the IPG20N04S4L08ATMA1 is 175°C, as specified in the datasheet.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 10 K/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the device should be mounted on a PCB with good thermal conductivity.
  • The recommended gate resistor value for the IPG20N04S4L08ATMA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, the IPG20N04S4L08ATMA1 is a high-reliability device, with a failure rate of ≤ 10 FIT (failures per 10^9 hours) at 125°C, making it suitable for high-reliability applications.
  • To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.

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IPG20N04S4L08ATMA1 Overview

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