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IPG20N06S2L-50 - Infineon

Description: N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON Infineon IPG20N06S2L-50

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IPG20N06S2L-50 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4
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IPG20N06S2L-50 Details

  • Manufacturer Part Number:

    IPG20N06S2L-50

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    9

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    51 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N06S2L-50 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPG20N06S2L-50 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is properly mounted. Additionally, consider the PCB layout and airflow around the device to minimize thermal resistance.
  • The recommended gate drive voltage for the IPG20N06S2L-50 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to avoid damage to the device.
  • Yes, the IPG20N06S2L-50 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • To protect the IPG20N06S2L-50 from overvoltage and overcurrent, consider using a voltage clamp or a TVS diode to limit the voltage stress. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IPG20N06S2L-50 Overview

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