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IPG20N06S415ATMA2 - Infineon

Description: Mosfet Array 2 N-Channel (Dual) 60V 20A 50W Surface Mount PG-TDSON-8-4

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IPG20N06S415ATMA2 - Infineon - PCB symbol
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PCB Footprints
IPG20N06S415ATMA2 - Infineon PCB footprint - Other - Other - PG-TDSON-8-4 -2022
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3D Models
IPG20N06S415ATMA2 - Infineon - 3D model - Other - PG-TDSON-8-4 -2022
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IPG20N06S415ATMA2 Details

  • Manufacturer Part Number:

    IPG20N06S415ATMA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0155 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPG20N06S415ATMA2 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for IPG20N06S415ATMA2 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure the MOSFET is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value between 10Ω to 100Ω is recommended.
  • For optimal performance, it's recommended to use a PCB layout that minimizes the parasitic inductance and resistance. A compact layout with short leads and a solid ground plane is recommended. The source pin should be connected to the PCB ground plane using a low-inductance path.
  • Yes, the IPG20N06S415ATMA2 is suitable for high-frequency switching applications up to 100 kHz. However, the user should ensure that the gate drive circuitry is capable of providing a fast rise and fall time to minimize switching losses.
  • To protect the MOSFET from overvoltage and overcurrent, it's recommended to use a voltage clamp circuit and a current sense resistor. A fuse or a current limiter can also be used to prevent overcurrent conditions.

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IPG20N06S415ATMA2 Overview

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